HX6356 Key Features
- Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75 µm Process (Leff = 0.6 µm)
- Total Dose Hardness through 1x106 rad(SiO2)
- Listed On SMD# 5962-95845
- Fast Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C)
- Typical Operating power < 15 mW/MHz
- Asynchronous Operation
- CMOS or TTL patible I/O
- Single 5 V ± 10% Power Supply
- Packaging Options
- 36-Lead CFP-Bottom Braze (0.630 in. x 0.650 in.)