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Honeywell International Electronic Components Datasheet

HX6356 Datasheet

32K x 8 STATIC RAM-SOI

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Aerospace Electronics
32K x 8 STATIC RAM—SOI
HX6356
FEATURES
RADIATION
OTHER
• Fabricated with RICMOSIV Silicon on Insulator (SOI)
0.75
µm
Process
(L
eff
=
0.6
µm)
• Total Dose Hardness through 1x106 rad(SiO2)
• Neutron Hardness through 1x1014 cm-2
www.DataSheet4U.com
• Dynamic and Static Transient Upset Hardness
through 1x1011 rad(Si)/s
• Listed On SMD# 5962-95845
• Fast Read/Write Cycle Times
17 ns (Typical)
25 ns (-55 to 125°C)
• Typical Operating power < 15 mW/MHz
• Asynchronous Operation
• Dose Rate Survivability through 1x1012 rad(Si)/s
• CMOS or TTL Compatible I/O
• Soft Error Rate of <1x10-10 upsets/bit-day
in Geosynchronous Orbit
• Latchup Free
• Single 5 V ± 10% Power Supply
• Packaging Options
- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V ±
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOSIV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOSIV process is a
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µm
effective gate length—Leff). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.


Honeywell International Electronic Components Datasheet

HX6356 Datasheet

32K x 8 STATIC RAM-SOI

No Preview Available !

HX6356
FUNCTIONAL DIAGRAM
A:0-8,12-13
11
CE
NCS
NWE
www.DataSheet4U.comNOE
A:9-11, 14
4
Row
Decoder
32,768 x 8
Memory
Array
•••
Column Decoder
Data Input/Output
WE • CS • CE
8
8
DQ:0-7
NWE • CS • CE • OE
(0 = high Z)
1 = enabled
Signal
#
Signal
All controls must be
enabled for a signal to
pass. (#: number of
buffers, default = 1)
SIGNAL DEFINITIONS
A: 0-14
DQ: 0-7
NCS
NWE
NOE
CE
Address input pins which select a particular eight-bit word within the memory array.
Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write
operation.
Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS
forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and
disables all input buffers except CE. If this signal is not used it must be connected to VSS.
Negative write enable, when at a low level activates a write operation and holds the data output drivers in a
high impedance state. When at a high level NWE allows normal read operation.
Negative output enable, when at a high level holds the data output drivers in a high impedance state. When
at a low level, the data output driver state is defined by NCS, NWE and CE. If this signal is not used it must
be connected to VSS.
Chip enable, when at a high level allows normal operation. When at a low level CE forces the SRAM to a
precharge condition, holds the data output drivers in a high impedance state and disables all the input buffers
except the NCS input buffer. If this signal is not used it must be connected to VDD.
TRUTH TABLE
NCS CE NWE
L HH
LHL
H X XX
X L XX
NOE
L
X
XX
XX
MODE
DQ
Read Data Out
Write
Data In
Deselected High Z
Disabled High Z
Notes:
X: VI=VIH or VIL
XX: VSSVIVDD
NOE=H: High Z output state maintained for
NCS=X, CE=X, NWE=X
2


Part Number HX6356
Description 32K x 8 STATIC RAM-SOI
Maker Honeywell
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