Overview: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM
www.DataSheet4U.com The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell’s radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. Power consumption is typically <30 mW @ 1MHz in write mode, <14 mW @ 1MHz in read mode, and is less than 5 mW when in standby mode. Honeywell’s enhanced RICMOS™(Radiation Insensitive CMOS) SOI V technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ V low power process is a SOI CMOS technology with an 80 Å gate oxide and a minimum drawn feature size of 0.35 µm.
