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HX6408 - 512k x 8 STATIC RAM

Description

Typ Max 3.3 25 3.6 125 VDD+0.3 50 Units V °C V ms 4 www.honeywell.com HX6408 Advanced Information DC ELECTRICAL CHARACTERISTICS Symbol IDDSB Parameter Static Supply Current TA=25°C TA=125°C Static Supply Current Deselected Dynamic Supply Current, Selected (Write) 1 MHz 2 MHz 10 MHz 25 MHz 40 M

Features

  • include tungsten via and contact plugs, Honeywell’s proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing and the low collection volume SOI substrate provide improved dose rate hardening.

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Datasheet Details

Part number HX6408
Manufacturer Honeywell
File Size 205.42 KB
Description 512k x 8 STATIC RAM
Datasheet download datasheet HX6408 Datasheet
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Full PDF Text Transcription

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HX6408 Advanced Information HX6408 512k x 8 STATIC RAM www.DataSheet4U.com The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell’s radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. Power consumption is typically <30 mW @ 1MHz in write mode, <14 mW @ 1MHz in read mode, and is less than 5 mW when in standby mode.
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