HX6408 - 512k x 8 STATIC RAM

Honeywell

Datasheet Details

Typ Max 3.3 25 3.6 125 VDD+0.3 50 Units V °C V ms 4 www.honeywell.com HX6408 Advanced Information DC E.

include tungsten via and contact plugs, Honeywell’s proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing and the low collection volume SOI substrate provide improved dose rate hardening.

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