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Honeywell International Electronic Components Datasheet

HX6408 Datasheet

512k x 8 STATIC RAM

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HX6408
Advanced Information
HX6408
512k x 8 STATIC RAM
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The 512K x 8 Radiation Hardened Static RAM is a high
performance 524,288 word x 8-bit static random access
memory with optional industry-standard functionality. It is
fabricated with Honeywell’s radiation hardened Silicon On
Insulator (SOI) technology, and is designed for use in low
voltage systems operating in radiation environments. The
RAM operates over the full military temperature range and
requires only a single 3.3 V ± 0.3V power supply. Power
consumption is typically <30 mW @ 1MHz in write mode,
<14 mW @ 1MHz in read mode, and is less than 5 mW
when in standby mode.
The RICMOS™ V low power process is a SOI CMOS
technology with an 80 Å gate oxide and a minimum
drawn feature size of 0.35 µm. Additional features
include tungsten via and contact plugs, Honeywell’s
proprietary SHARP planarization process and a lightly
doped drain (LDD) structure for improved short
channel reliability. A seven transistor (7T) memory cell
is used for superior single event upset hardening,
while three layer metal power busing and the low
collection volume SOI substrate provide improved
dose rate hardening.
Honeywell’s enhanced RICMOS™(Radiation Insensitive
CMOS) SOI V technology is radiation hardened through the
use of advanced and proprietary design, layout and process
hardening techniques.
FEATURES
ƒ Fabricated with RICMOS™ V
ƒ No Latchup
ƒ Single Power Supply,
Silicon On Insulator (SOI)
3.3 V ± 0.3 V
ƒ
ƒ
ƒ
0.35 mm Process (Leff = 0.28 µm)
Total Dose 3x105 and 1X106 rad(SiO2)
Neutron 1x1014 cm-2
ƒ
ƒ
Read/Write Cycle Times
20 ns, (3.3 V), -55 to 125°C
Typical Operating Power (3.3 V)
<14 mW @ 1MHz Read
ƒ
ƒ
Operating Range is
-55°C to +125°C
36-Lead Flat Pack Package
ƒ Dynamic and Static Transient Upset
1x1010 rad(Si)/s (3.3 V)
<30 mW @ 1MHz Write
<5 mW Standby mode
ƒ Optional Low Power Sleep
Mode
ƒ Dose Rate Survivability 1x1012 rad(Si)/s ƒ Asynchronous Operation
ƒ Soft Error Rate
1x10-10 Upsets/bit-day (3.3 V)
ƒ CMOS Compatible I/O
1 www.honeywell.com


Honeywell International Electronic Components Datasheet

HX6408 Datasheet

512k x 8 STATIC RAM

No Preview Available !

HX6408
Advanced Information
FUNCTIONAL DIAGRAM
36 LEAD FLAT PACK PINOUT
An
NWE
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NSL
NCS
NOE
Memory
Array
WE • CS
NWE • CS
DQ(0:7)
All controls must be enabled
for signal to pass.
# = number of buffers,
Default = 1
1 = enabled
Signal #
Signal
A0
1
HX6408
Top View
36
(NSL)
A1 2
35 A18
A2 3
34 A17
A3 4
33 A16
A4 5
32 A15
NCS 6
31 NOE
D0 7
30 D4
D1 8
29 D5
VDD 9
28 VSS
VSS 10
27 VDD
D2 11
26 D6
D3 12
25 D7
NWE 13
24 A14
A5 14
23 A13
A6 15
22 A12
A7 16
21 A11
A8 17
20 A10
A9 18
19 NAS
SIGNAL DEFINITIONS
A: 0-18 Address input pins, which select a particular eight-bit word within the memory array.
DQ: 0-7 Bidirectional data pins, which serve as data outputs during a read operation and as data inputs
during a write operation.
NCS
Negative chip select, when at a low level allows normal read or write operation. When at a high level
NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance
state. If this signal is not used it must be connected to VSS.
NWE
Negative write enable, when at a low level activates a write operation and holds the data output
drivers in a high impedance state. When at a high level NWE allows normal read operation.
NOE
Negative output enable, when at a high level holds the data output drivers in a high impedance
state. When at a low level, the data output driver state is defined by NCS, NWE and NSL. This
signal is asynchronous.
NSL
Not sleep, when at a high level allows normal operation. When at a low level NSL forces the SRAM
to a precharge condition, holds the data output drivers in a high impedance state and disables all the
input buffers except the NCS and NOE input buffers. If this signal is not used it must be connected
to VDD. This signal is asynchronous. The HX6408 may be ordered without the sleep mode option
and pin 36 is then a NC.
2 www.honeywell.com


Part Number HX6408
Description 512k x 8 STATIC RAM
Maker Honeywell
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