3DD13003D Description
脉冲测试 tp≤300μs,δ≤2% VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 IC=0.1mA IC=1mA IE=0.1mA VCE=5V, IC=0. 5A hFE1:VCE=5V, IC=5mA hFE2:VCE=5V, IC=0.
3DD13003D is Silicon NPN bipolar transistor low-frequency amplification manufactured by Huajing Microelectronics.
| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
3DD13003 | High Voltage Fast Switching NPN Power Transistor |
Jiangsu Changjiang Electronics |
3DD13003 | TRANSISTOR |
TRANSYS Electronics |
3DD13003 | Plastic-Encapsulated Transistors |
JILIN SINO-MICROELECTRONICS |
3DD13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
JILIN SINO-MICROELECTRONICS |
3DD13003A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
脉冲测试 tp≤300μs,δ≤2% VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 IC=0.1mA IC=1mA IE=0.1mA VCE=5V, IC=0. 5A hFE1:VCE=5V, IC=5mA hFE2:VCE=5V, IC=0.