Datasheet4U Logo Datasheet4U.com

3DD5017 - Low-frequency amplification shell rated bipolar transistors

📥 Download Datasheet

Datasheet preview – 3DD5017

Datasheet Details

Part number 3DD5017
Manufacturer Huajing Microelectronics
File Size 95.54 KB
Description Low-frequency amplification shell rated bipolar transistors
Datasheet download datasheet 3DD5017 Datasheet
Additional preview pages of the 3DD5017 datasheet.

📁 Similar Datasheet

  • 3DD5017 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5017P - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD5011 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5023 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 3DD5023 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5023P - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD5024 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 3DD5024 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 3DD5024 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
  • 3DD5024A - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO-MICROELECTRONICS)
Other Datasheets by Huajing Microelectronics

Full PDF Text Transcription

Click to expand full text
3DD5017 1. 3DD5017 NPN ，， 。： ● 、 ● ● ● ● ：TO-3P(H)IS 2. 15.5max 5.5max 3max Φ3.6 26.5max 4.5 2.1 ，Tamb= 25℃ - VCE0 650 V - VCB0 1100 V - VEB0 IC 7 15 V A 17max 2max 0.75max Ta=25℃ Ptot 3.0 Tc=25℃ 55 W Tj 150 ℃ 5.45 5.45 BCE 3.3min 0.9max Tstg -55～150 ℃ 2.2 ，Tamb= 25℃ - - - - ICB0 IEB0 hFEa（1） hFEa（2） VCEsata Va BEsat tf fT a: tp≤300μs,δ≤2% VCB=1100V, IE=0 VEB=7V, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCC=200V, IC=7A 2IB1=-IB2=1.4A VCE=10V, IC=1.2A f=1.0MHz 0.5 10 15 40 8 0.5 1.5 0.3 4 mA μA V V μs MHz 12 3DD5017 3. IC (A) 10 () Tcase=25℃ 1 0.1 0.
Published: |