l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche e.

Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rat.

CS25N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 performance and enhance the avalanche energy. Th.

CS25N06B3

CS25N06B4

CS25N06C3

CS25N06C4

CS25N10A4

CS25N50A8R

CS25N50AKR

CS25N50AKRZ-G

CS25N50ANR

CS25N50FA9R

CS250

CS2500

CS2501