CS2N80A3HY Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS2N80A3HY Features

* l Fast Switching l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:4.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 IAS a2 dv/dt

CS2N80A3HY General Description

VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.8 Ω performance and enhance the avalanche energy. The transistor can be used in va.

CS2N80A3HY Datasheet (663.51 KB)

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CS2N80A3HY

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Huajing Microelectronics

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663.51 KB

Description:

Silicon n-channel power mosfet.

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CS2N80A3HY Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS2N80A3HY Features

CS2N80A3HY General Description

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