CS3N40A23 Description
： VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with...