l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche ene.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS E.

VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.7 Ω performance and enhance the avalanc.

CS3N65A4H-G

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N120A0R-G

CS3N120A3R

CS3N120A4R

CS3N120A8R

CS3N120AHR

CS3N120FA9R

CS3N150A0R

CS3N150AHR

CS3N150AKR