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Huajing Microelectronics

CS6N60A3HDY Datasheet Preview

CS6N60A3HDY Datasheet

Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET
CS6N60 A3HDY
R
General Description
CS6N60 A3HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251,which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 25nC)
l Low Reverse transfer capacitances(Typical: 10pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
6
95
1.0
Rating
600
6
3.6
24
±30
450
31
2.5
5.0
95
0.76
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1




Huajing Microelectronics

CS6N60A3HDY Datasheet Preview

CS6N60A3HDY Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

CS6N60 A3HDY
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =600V, VGS= 0V,
Ta = 25
VDS =480V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
VGS=10V,ID=3A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
600 -- --
-- 0.67 --
-- -- 1
-- -- 100
-- -- 10
-- -- -10
Unit
s
V
V/
µA
µA
µA
µA
Rating
Min. Typ. Max.
-- 1.0 1.3
2.0 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =3A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =6A VDD = 300V
RG =9.1
ID =6A VDD =300V
VGS = 10V
Rating
Min. Typ. Max.
5 --
-- 950
-- 98
-- 10
Units
S
pF
Rating
Min. Typ. Max.
-- 11 --
-- 10 --
-- 36 --
-- 18 --
-- 25
-- 4
-- 10
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1


Part Number CS6N60A3HDY
Description Silicon N-Channel Power MOSFET
Maker Huajing Microelectronics
Total Page 10 Pages
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