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CS6N60A4D - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS6N60A4D
Manufacturer Huajing Microelectronics
File Size 351.27 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N60A4D Datasheet

Full PDF Text Transcription for CS6N60A4D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS6N60A4D. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS6N60 A4D ○R General Description： CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charge

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