l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche en.

Atx Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 I.

CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power.

CS6N80A0H

CS6N80A4R

CS6N80ARH

CS6N80FA9

CS6N120A0R-G

CS6N120A8R-G

CS6N120AHR-G

CS6N120AKR-G

CS6N120FA9R-G

CS6N40A3R

CS6N40A4R

CS6N40FA9R

CS6N60