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HMP112F7EFR8C-Y5N3 - 240pin Fully Buffered DDR2 SDRAM DIMMs

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • novel architecture including the Advanced Memory Buffer that isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point Link Interface at 1.5V power. Th.

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Other Datasheets by SK Hynix

Part Number Description
HMP112F7EFR8C-Y5 240pin Fully Buffered DDR2 SDRAM DIMMs
HMP112F7EFR8C-S5 240pin Fully Buffered DDR2 SDRAM DIMMs
HMP112F7EFR8C-S6D3 240pin Fully Buffered DDR2 SDRAM DIMMs
HMP112F7EFR8C-S6D5 240pin Fully Buffered DDR2 SDRAM DIMMs
HMP112S6EFR6C-C4 200pin Unbuffered DDR2 SDRAM SO-DIMMs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point Link Interface at 1.5V power. The AMB also allows buffering of memory traffic to support large memory capacities.