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HY57V641620STP

HY57V641620STP is Synchronous DRAM Memory 64Mbit manufactured by SK Hynix.
HY57V641620STP datasheet preview

HY57V641620STP Details

Part number HY57V641620STP
Datasheet HY57V641620STP / HY57V641620FTP Datasheet PDF (Download)
File Size 160.27 KB
Manufacturer SK Hynix
Description Synchronous DRAM Memory 64Mbit
HY57V641620STP page 2 HY57V641620STP page 3

HY57V641620STP Overview

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V641620STP Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free
  • Internal four banks operation
  • Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst

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Hynix Semiconductor Logo HY57V641620HG-I 4 Banks x 1M x 16Bit Synchronous DRAM Hynix Semiconductor

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