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HY5RS573225F - 256 GDDR3 SDRAM

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Hynix Semiconductor

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HY5RS573225F 256 GDDR3 SDRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY5RS573225F

Datasheet Details

Part number	HY5RS573225F
Manufacturer	Hynix Semiconductor
File Size	1.29 MB
Description	256 GDDR3 SDRAM
Datasheet	HY5RS573225F Datasheet
Additional preview pages of the HY5RS573225F datasheet.

Product details

Description

and is subject to change without notice.

Features

VDD=1.8V ± 0.1V, VDDQ=1.8V ± 0.1V Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Calibrated output drive Differential clock inputs (CK and CK#) Commands entered on each positive CK edge RDQS edge-aligned with data for READs; with WDQS center-aligned with data for WRITEs Four interna.

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Published: Aug 21, 2008 |