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HY5S6B6 Datasheet - Hynix Semiconductor

(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM

HY5S6B6 Features

* Standard SDRAM Protocol Internal 4bank operation

* Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Streng

HY5S6B6 General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.3 / July 2004 1 w w w .D at h S a t e e 4U . m o c HY5S6B6D(L/S)F(P)-xE 4Banks x1M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Pow.

HY5S6B6 Datasheet (386.10 KB)

Preview of HY5S6B6 PDF

Datasheet Details

Part number:

HY5S6B6

Manufacturer:

Hynix Semiconductor

File Size:

386.10 KB

Description:

(hy5s6b6d/l/s/f/p) 4banks x 1m x 16-bits sdram.
Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History w w w Revision No. 0.1 0.2 0.3 Initial Draft .D at h S a t e e 4U . .

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HY5S6B6 HY5S6B6D 4Banks 16-Bits SDRAM Hynix Semiconductor

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