Datasheet Summary
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HY62UF16800B Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No 00 01 History Initial Release DC Para Change Icc 4mA à Icc1(Min) 40mA à Icc1(1us) 8mA à Isb 0.1mA à Isb1 25uA à Iccdr 12uA à Pin Connection E3 DNU à E3 NC Draft Date May.29.2001 Mar.20.2002 3mA 20mA 2mA 0.3mA 15uA 6uA Apr.10.2002 Remark Preliminary
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / Apr. 2002 Hynix Semiconductor
DESCRIPTION
The...