Datasheet Summary
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HY64SD16162B Series
Document Title
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
Revision No. History
1.0 Initial
Draft Date
Dec. 4. ’02
Remark
Preliminary
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Revision 1.0 / December. 2002 1
HY64SD16162B Series
1M x 16 bit Low Low Power 1T/1C SRAM
DESCRIPTION
The HY64SD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64SD16162B adopts one transistor memory cell and is organized as 1,048,576...