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HY67V161610D Datasheet, Hynix Semiconductor

HY67V161610D dram equivalent, 2 banks x 512k x 16 bit synchronous dram.

HY67V161610D Avg. rating / M : 1.0 rating-16

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HY67V161610D Datasheet

Features and benefits


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* Single 3.0V to 3.6V power supply Note1)
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* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst.

Application

which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D i.

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HY67V161610D Page 1 HY67V161610D Page 2 HY67V161610D Page 3

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