ICPB1005
ICPB1005 is Discrete Power GaN HEMT manufactured by ICONIC RF.
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Discrete Power GaN HEMT 25 Watt
Features
- Frequency Range DC-14GHz
- 45.5dBm Nominal P3dB Pulsed
- Maximum PAE at 6GHz of 70%
- 18dB Linear Gain at 6GHz
- Drain Bias 28V
- Technology: GaN on SiC
- Lead-free and RoHS pliant
- Chip Dimensions: 0.824 x 1.44 x 0.10mm
Applications
- Aerospace & Defense
- Broadband Wireless
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Description
The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width=100uS, Duty cycle=10%
Frequency
GHz
Typical
Output Power P3dB...
