Datasheet Details
| Part number | ICPB1010 |
|---|---|
| Manufacturer | ICONIC RF |
| File Size | 2.03 MB |
| Description | Discrete Power GaN HEMT |
| Datasheet | ICPB1010-ICONICRF.pdf |
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Overview: ICPB1010 | Discrete Power GaN HEMT 50 Watt.
| Part number | ICPB1010 |
|---|---|
| Manufacturer | ICONIC RF |
| File Size | 2.03 MB |
| Description | Discrete Power GaN HEMT |
| Datasheet | ICPB1010-ICONICRF.pdf |
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The ICPB1010 is a GaN on SiC discrete HEMT that operates from DC-14GHz.
The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width =100uS, Duty cycle = 10% Frequency GHz 3 Typical 6 10 14 Output Power P3dB Bias Current dBm mA 48.3 200 48.5 200 48.5 48.6 200 200 PAE @ P3dB % Gain @ P3dB dB 74.6 19.8 72 14.8 65 55.8 9.7 6.1 Recommended operating conditions Absolute Maximum Ratings Drain Voltage (VDG) Drain Quiescent Current (ID) Drain current RF Drive (ID) Gate Voltage (VG) Power Dissipation (CW) Channel Temperature (Max) 12-32 V 0.2-0.5A 4A -2.6V 56W 225°C Drain to Gate Voltage (VDG) Gate Voltage Range (VG) Gate Current (IG) Power Dissipation (CW) 80 V -20V to 0V -10 to 30mA 63W CW Input Power +40dBm Channel Temperature 275°C Storage Temperature -65°C to +150°C Exceeding any one or combination of these limits may cause permanent damage to this device.
| Part Number | Description |
|---|---|
| ICPB1005 | Discrete Power GaN HEMT |
| ICPB1020 | Discrete Power GaN HEMT |
| ICPB2002 | Discrete Power GaN HEMT |
| ICPB2005 | Discrete Power GaN HEMT |
| ICP0349P | 2.7 - 3.5GHz 70W GaN PA MMIC |