ICPB1010
ICPB1010 is Discrete Power GaN HEMT manufactured by ICONIC RF.
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Discrete Power GaN HEMT 50 Watt
Features
- Frequency Range DC-14GHz
- 48.5dBm Nominal P3dB Pulsed
- Maximum PAE at 6GHz of 72%
- 17.8dB Linear Gain at 6GHz
- Drain Bias 28V
- Technology: GaN on SiC
- Lead-free and RoHS pliant
- Chip Dimensions: 0.824 x 2.495 x 0.10mm
Applications
- Aerospace & Defense
- Broadband Wireless
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Description
The ICPB1010 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width =100uS, Duty cycle = 10%
Frequency
GHz
Typical
Output Power P3dB Bias...
