Datasheet Details
| Part number | 2N3902 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.09 KB |
| Description | NPN Transistor |
| Download | 2N3902 Download (PDF) |
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| Part number | 2N3902 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.09 KB |
| Description | NPN Transistor |
| Download | 2N3902 Download (PDF) |
|
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.5 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Operating Temperature Range -65~+150 ℃ Tstg Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.75 ℃/W 2N3902 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) * Collector-Emitter Sustaining Voltage IC=100mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3902 | Bipolar Transistor | Multicomp |
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2N3902 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi |
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2N3902 | Bipolar NPN Device | Seme LAB |
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2N3902 | HIGH VOLTAGE NPN SILICON TRANSISTORS | Motorola |
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2N3902 | NPN High Power Silicon Transistors | VPT |
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