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2N6131 - NPN Transistor

Description

DC Current Gain- : hFE = 20-100@ IC= 2.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) Complement to Type 2N6134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6131 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Complement to Type 2N6134 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
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