2N6131
DESCRIPTION
- DC Current Gain-
: h FE = 20-100@ IC= 2.5A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
- plement to Type 2N6134
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in power amplifier and switching circuits applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL...
