Datasheet Details
| Part number | 2N6278 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.88 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2N6278 Datasheet
|
|
|
| Part number | 2N6278 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.88 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2N6278 Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6278 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6278 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA IEBO Emitter-Base Cutoff Current VBE=6V ICEO Collector-Emitter Cutoff Current VCE= 50V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=20A;
IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A;
IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2N6278 | HIGH-POWER NPN SILICON TRANSISTORS | ETC |
 |
2N6278 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N6274 | Silicon NPN Power Transistor |
| 2N6275 | Silicon NPN Power Transistor |
| 2N6276 | Silicon NPN Power Transistor |
| 2N6212 | PNP Transistor |
| 2N6216 | NPN Transistor |
| 2N6217 | NPN Transistor |
| 2N6280 | Silicon NPN Power Transistor |
| 2N6281 | Silicon NPN Power Transistor |
| 2N6282 | NPN Transistor |
| 2N6283 | NPN Transistor |