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2N6278 - Silicon NPN Power Transistor

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Datasheet Details

Part number 2N6278
Manufacturer INCHANGE
File Size 222.88 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N6278-INCHANGE.pdf

2N6278 Product details

Description

Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 25

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