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2N6278 Datasheet Preview

2N6278 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: VCEO=100V(Min)
·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PD
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
50
A
250
W
-65~200
Tstg
Storage Temperature Range
-65~200
2N6278
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6278 Datasheet Preview

2N6278 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2N6278
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA
IEBO
Emitter-Base Cutoff Current
VBE=6V
ICEO
Collector-Emitter Cutoff Current
VCE= 50V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=50A; IB= 10A
hFE-1
DC Current Gain
IC=1A; VCE= 4V
hFE-2
DC Current Gain
IC=20A; VCE=4V
hFE-3
DC Current Gain
IC=50A; VCE= 4V
MIN TYP. MAX UNIT
100
V
100 uA
50
uA
1.2
V
3
V
1.8
V
3.5
V
10
30
120
50
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N6278
Description Silicon NPN Power Transistor
Maker INCHANGE
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