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2N6274 - High Power NPN SIlicon Transistor

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Part Number Description
2N6275 High Power NPN SIlicon Transistor
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275 VCEO(sus) = 150 Vdc (Min) — 2N6277 • High DC Current Gain — hFE = 30–120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC 20 Adc tr = 0.35 µs (Max) ts = 0.8 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.