Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Power NPN Silicon Transistors
. . . designed for use in industrial- military power amplifer and switching circuit applications.
- High Collector Emitter Sustaining
- VCEO(sus) = 100 Vdc (Min)
- 2N6274 VCEO(sus) = 120 Vdc (Min)
- 2N6275
VCEO(sus) = 150 Vdc (Min)
- 2N6277
- High DC Current Gain
- hFE = 30- 120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc
- Low Collector- Emitter Saturation Voltage
- VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
- Fast Switching Times @ IC 20 Adc tr = 0.35 µs (Max) ts = 0.8 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ- plement to 2N6377- 79
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1)...
