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2N6283 Datasheet Preview

2N6283 Datasheet

NPN Transistor

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isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC =10 Adc
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=80V(Min)
·Complement to type 2N6286
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Intended for general purpose amplifier and low frequency
switching applications, such as linear and switching indu-
strial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@TC=25160
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.09
UNIT
/W
2N6283
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6283 Datasheet Preview

2N6283 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 200mA
VBE(sat) Base-Emitter Saturation voltage
IC= 20A; IB= 200mA
VBE(on) Base-Emitter On voltage
IC= 10A ; VCE= 3V
ICEO
Collector Cutoff current
VCE= 40V; IB=0
IEBO
Emitter Cut-off current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10A ; VCE= 3V
hFE-2
DC Current Gain
IC= 20A ; VCE= 3V
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
2N6283
MIN MAX UNIT
80
V
2.0
V
3.0
V
4.0
V
2.8
V
1.0
mA
2.0
mA
750 18000
100
400
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6283
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2N6283 Datasheet PDF





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