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INCHANGE

2N7000 Datasheet Preview

2N7000 Datasheet

N-Channel MOSFET

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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2N7000
·FEATURES
·With TO-92 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·Load switch
·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
200
IDM
Drain Current-Single Pulsed
1.3
PD
Total Dissipation @TC=25
350
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
mA
A
mW
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
357
UNIT
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

2N7000 Datasheet Preview

2N7000 Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2N7000
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.01mA
60
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1mA
0.8
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=0.5A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±15V;VDS= 0V
Drain-Source Leakage Current
VDS=48V; VGS= 0V;Tc=25
VDS=48V; VGS= 0V;Tc=125
Diode forward voltage
ISD=0.5A, VGS = 0 V
V
3.0
V
5
mΩ
±0.01 μA
1
1000
μA
1.5
V
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number 2N7000
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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2N7000 Datasheet PDF





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