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2SA1012 Datasheet Preview

2SA1012 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
2SA1012
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -3A
·High Switching Speed
·Complement to Type 2SC2562
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
-5
A
25
W
150
Tstg
Storage Temperature Range
-55~150
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INCHANGE

2SA1012 Datasheet Preview

2SA1012 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2SA1012
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
hFE-2
DC Current Gain
IC= -3A ; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -3A ,RL= 10Ω,
IB1= -IB2= -0.15A,VCC= -30V
MIN TYP. MAX UNIT
-50
V
-0.4
V
-1.2
V
-1
μA
-1
μA
70
240
30
60
MHz
170
pF
0.1
μs
1.0
μs
0.1
μs
hFE-1 Classifications
O
Y
70-140
120-240
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA1012
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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