Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -3A
High Switching Speed
Complement to Type 2SC2562
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high current switching ap
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isc Silicon PNP Power Transistor
2SA1012
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA1012 Datasheet
