Datasheet Details
| Part number | 2SA1931 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.58 KB |
| Description | PNP Transistor |
| Download | 2SA1931 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1931 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.58 KB |
| Description | PNP Transistor |
| Download | 2SA1931 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1931 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1931 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1931 | Silicon PNP Transistor | Toshiba |
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|---|---|
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