2SA2004 - PNP Transistor

Inchange Semiconductor

General Description

Silicon PNP epitaxial planner type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL

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Datasheet Details

Part number	2SA2004
Manufacturer	Inchange Semiconductor
File Size	175.92 KB
Description	PNP Transistor
Datasheet	2SA2004 Datasheet

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2004 DESCRIPTION ·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.