φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating.
60.
60.
5.
16.
8 20 2.0 150.
55 to +150 °C °C Unit V V V A A W
0.55±0.15
2.54±0.30 5.08±0.50 1 2 3
1: Base 2: Collector 3: Emitter.
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Power Transistors
2SA2004
Silicon PNP epitaxial planer type
Unit: mm
For power amplification
9.9±0.3
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching
15.0±0.5
I Features
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −16 −8 20 2.0 150 −55 to +150 °C °C Unit V V V A A W
0.55±0.15
2.54±0.30 5.08±0.
2SA2004 Datasheet