2SA2009 Description
Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification.
2SA2009 Key Features
- High collector to emitter voltage VCEO
- Low noise voltage NV
2SA2009 is Silicon PNP epitaxial planer type Transistor manufactured by Panasonic.
| Part Number | Description |
|---|---|
| 2SA2004 | Silicon PNP Transistor |
| 2SA2010 | Silicon PNP epitaxial planer type Transistor |
| 2SA2021 | Silicon PNP epitaxial planer type Transistor |
| 2SA2028 | Silicon PNP epitaxial planer type Transistor |
| 2SA2057 | Silicon PNP Transistor |
Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification.