2SA2009 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
High collector to emitter voltage VCEO.
Low noise voltage NV
0.3+0.1.
0.0 3
0.15+0.10.
0.05
1.25±0.10
2.1±0.1 5˚
1
2
0.2±0.1
(0.65) (0.65)
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
2SA2009
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For low-frequency high breakdown voltage amplification I Features
• High collector to emitter voltage VCEO • Low noise voltage NV
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5˚
1
2
0.2±0.1
(0.65) (0.65)
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −120 −120 −5 −50 −20 150 150 −55 to +150 Unit V V V mA mA mW °C °C
10˚
1.3±0.1 2.0±0.
2SA2009 Datasheet