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2SA968B Datasheet Preview

2SA968B Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA968B
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -200V(Min)
·Good Linearity of hFE
·Complement to Type 2SC2238B
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
IE
Emitter Current- Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
A
25
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SA968B Datasheet Preview

2SA968B Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA968B
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -0.1A ; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.1A;VCE= -10V
MIN TYP. MAX UNIT
-200
V
-5
V
-1.5
V
-1.0
V
-1.0 μA
-1.0 μA
70
240
30
pF
100
MHz
hFE Classifications
O
Y
70-140 120-240
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA968B
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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2SA968B Datasheet PDF





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