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2SA968B - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC2238B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA968B DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2238B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.