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2SB1372 Datasheet Preview

2SB1372 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1372
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD2065
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
-12
A
80
W
3
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SB1372 Datasheet Preview

2SB1372 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1372
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base -Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
60
200
20
15
MHz
200
pF
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SB1372
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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