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2SB1372 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplificatio

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1372 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2065 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.