2SB690
2SB690 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min)
- High Power Dissipation
- plement to Type 2SD726
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-4
Collector Current-Peak
Total Power Dissipation @ TC=25℃
Junction Temperature
-8
℃
Tstg
Storage Temperature Range
-45~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power...
