Datasheet Details
| Part number | 2SB692 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.71 KB |
| Description | PNP Transistor |
| Datasheet | 2SB692-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB692.
| Part number | 2SB692 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.71 KB |
| Description | PNP Transistor |
| Datasheet | 2SB692-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD728 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Part Number | Description |
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| 2SB609 | PNP Transistor |