Datasheet Details
| Part number | 2SB690 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.91 KB |
| Description | PNP Transistor |
| Datasheet | 2SB690-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB690.
| Part number | 2SB690 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.91 KB |
| Description | PNP Transistor |
| Datasheet | 2SB690-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·High Power Dissipation ·Complement to Type 2SD726 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA;
| Part Number | Description |
|---|---|
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| 2SB695 | PNP Transistor |
| 2SB696 | PNP Transistor |
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| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
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| 2SB609 | PNP Transistor |