Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max.) @IC= -5A
Good Linearity of hFE
High Current Capability
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency amp
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB817C
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max.) @IC= -5A ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-20
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website： www.
2SB817C Datasheet
