Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
Good Linearity of hFE
High Current Capability
Wide Area of Safe Operation
Complement to Type 2SD1047E
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
D
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB817E
DESCRIPTION ··Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047E ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-15
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB817E Datasheet
