Datasheet4U Logo Datasheet4U.com

2SC1050 - NPN Transistor

General Description

With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purp

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1050 Silicon NPN Power Transistors SavantIC
2SC1051 SILICON POWER TRANSISTOR SavantIC
2SC1000 Silicon NPN Transistor Toshiba
2SC1000 Silicon NPN Transistor ETC
2SC1001 SILICON NPN TRANSISTOR Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC1051 NPN Transistor
2SC1004 NPN Transistor
2SC1008 NPN Transistor
2SC1024 NPN Transistor
2SC1027 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1050 DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 300 V 250 V 5 V 1.0 A 0.2 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.