Datasheet4U Logo Datasheet4U.com

2SC2098 - NPN Transistor

General Description

Silicon NPN epitaxial planar 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2098 is designed for 25=50MHz AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2098 SILICON NPN TRANSISTOR Toshiba
2SC2098 PNP / NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SC2091 Silicon NPN Transistor ETC
2SC2094 NPN Transistor Mitsubishi Electric Semiconductor
2SC2097 NPN Transistor Mitsubishi Electric Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2022 NPN Transistor
2SC2023 NPN Transistor
2SC2026 Silicon NPN RF Transistor
2SC2027 NPN Transistor
2SC2028 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2098 DESCRIPTION ·Silicon NPN epitaxial planar ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2098 is designed for 25=50MHz AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.