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2SC3150 Datasheet Preview

2SC3150 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 900V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
A
50
W
150
Tstg
Storage Temperature Range
-55~150
2SC3150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3150 Datasheet Preview

2SC3150 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC3150
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE=0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
10
μA
hFE-1
DC Current Gain
IC= 0.2A ; VCE= 5V
10
40
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
8
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest=1.0MHz
60
pF
fT
Current-Gain—Bandwidth Product
IC= 0.2A ; VCE= 10V
15
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= 0.4A; IB2= -0.8A
RL= 200Ω; VCC=400V
1.0 μs
3.0 μs
0.7 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3150
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SC3150 Datasheet PDF





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