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isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@TC=25℃ PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
7
A
20 W
2.0
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SC3746
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