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2SC3858 Datasheet Preview

2SC3858 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3858
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1494
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
200
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




INCHANGE

2SC3858 Datasheet Preview

2SC3858 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3858
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 8A ; VCE= 4V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -1A ; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A ,RL= 4Ω,
IB1= -IB2= 1A,VCC= 40V
hFE Classifications
Y
P
G
50-100 70-140 90-180
MIN TYP. MAX UNIT
200
V
2.5
V
100 μA
100 μA
50
180
300
pF
20
MHz
0.5
μs
1.8
μs
0.6
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark



Part Number 2SC3858
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2SC3858 Datasheet PDF





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