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2SC4591 - NPN Transistor

General Description

fT= 9.0GHz TYP.

NF = 1.2 dB TYP.

PG = 12.5 dB TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust devic

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4591 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 9.0GHz TYP. @VCE = 5 V, IC = 20 mA ·Low Noise NF = 1.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power Gain PG = 12.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.