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2SC4595 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) DC Current Gain- : hFE= 60(Min)@ (VCE= 2V, IC= 2A) Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 6A, IB= 0.3A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable opera

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4595 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 2V, IC= 2A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 6A, IB= 0.3A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 12 A 30 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.