2SC4747 Overview
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
2SC4747 Details
| Part number | 2SC4747 |
|---|---|
| Datasheet | 2SC4747-INCHANGE.pdf |
| File Size | 184.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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