Collector-Emitter Breakdown Voltage-
V(BR)CEO= 140V(Min)
Good Linearity of hFE
Complement to Type 2SA1909
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applic
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5101
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1909 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC5101 Datasheet
