2SC5886A Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.6A; IB= 32mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.6A; IB= 32mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
