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2SC5884 - NPN Transistor

Key Features

  • 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1.
  • High breakdown voltage: VCBO ≥ 1 500 V.
  • Wide safe operation area φ3.2±0.1.
  • Built-in dumper diode.
  • Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 4.1±0.2 Solder Dip 0.76±0.06 1.45±0.15 1.2±0.15 0.75±0.1 1.25±0.1 2.6±0.1 0.7±0.1 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge. ed ty Emitter.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 3.0±0.2 ■ Features 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 4.1±0.2 Solder Dip 0.76±0.06 1.45±0.15 1.2±0.15 0.75±0.1 1.25±0.1 2.6±0.1 0.7±0.1 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge.