900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2SC6076 Datasheet Preview

2SC6076 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC6076
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)=0.5V(Max) @IC= 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power Amplifier Applications
·Power Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
5.0
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
A
10
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.16 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC6076 Datasheet Preview

2SC6076 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB=50mA
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=100mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB=100mA
ICBO
Collector Cutoff Current
VCB=160V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 9V ; IC= 0
IC= 1mA ; VCE= 2V
hFE
DC Current Gain
IC= 0.5A ; VCE= 2V
IC= 1A ; VCE= 2V
2SC6076
MIN TYP. MAX UNIT
160
V
9
V
0.3
V
0.5
V
1.5
V
1.0 μA
1.0 μA
150
180
450
100
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC6076
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

2SC6076 Datasheet PDF





Similar Datasheet

1 2SC607 PNP/NPN SILICON EPITAXIAL TRANSISTOR
ETC
2 2SC6071 NPN Epitaxial Planar Silicon Transistor
Sanyo Semicon Device
3 2SC6072 Multi-chip Device Silicon NPN Epitaxial Transistor
Toshiba
4 2SC6075 Silicon NPN Transistor
Toshiba Semiconductor
5 2SC6076 NPN Transistor
INCHANGE
6 2SC6076 Silicon NPN Transistor
Toshiba Semiconductor
7 2SC6077 Silicon NPN Transistor
Toshiba Semiconductor
8 2SC6078 Silicon NPN Transistor
Toshiba Semiconductor
9 2SC6079 Silicon NPN Transistor
Toshiba Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy