Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)=0.5V(Max) @IC= 1A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power Amplifier Applications
- Power Switching...
