Datasheet4U Logo Datasheet4U.com

2SC6076 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.5V(Max) @IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Amplifier Applications Power Switching App

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC6076 Silicon NPN Transistor Toshiba Semiconductor
2SC607 PNP/NPN SILICON TRANSISTOR ETC
2SC6071 NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
2SC6072 Multi-chip Device Silicon NPN Transistor Toshiba
2SC6075 Silicon NPN Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC6011 NPN Transistor
2SC6011A NPN Transistor
2SC6082 TO-220F NPN Transistor
2SC6082 TO-252 NPN Transistor
2SC6082 TO-263 NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.5V(Max) @IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ·Power Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
Published: |